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shindengen 2sK2671 copyright & copy;2000 shindengen electric mfg.co.ltd outline dimensions ratings ( f5f90hvx2 ) (unit : mm) 900v 5a n-channel enhancement type hvx-2 series power mosfet case : fto-220 ?? switching power supply of ac 240v input ?? high voltage power supply ?? inverter application ?? input capacitance (ciss) is small. especially, input capacitance at 0 biass is small. ?? the static rds(on) is small. ?? the switching time is fast. ?? avalanche resistance guaranteed. features ??absolute maximum ratings ?itc = 25???j item symbol conditions ratings unit storage temperature t stg -55?`150 ?? channel temperature t ch 150 drain-source voltage v dss 900 v gate-source voltage v gss ?}30 continuous drain current?idc?j i d 5 continuous drain current?ipeak) i dp pulse width??10?s, duty cycle??1/100 10 a continuous source current?idc?j i s 5 total power dissipation p t 40 w repetitive avalanche current i ar t ch = 150?? 5 a single avalanche energy e as t ch = 25?? 100 mj repetitive avalanche energy e ar t ch = 25?? 10 dielectric strength v dis terminals to case,?@ac 1 minute 2 kv mounting torque tor ?i recommended torque ?f0.3 nm ?j 0.5 nm
copyright & copy;2000 shindengen electric mfg.co.ltd 2sK2671 ( f5f90hvx2 ) hvx-2 series power mosfet electrical characteristics tc = 25 item symbol conditions min. typ. max. unit drain-source breakdown voltage v (br)dss i d = 1 ma, v gs = 0v 900 v zero gate voltage drain current i dss v ds = 900v, v gs = 0v 250 a gate-source leakage current i gss v gs = 30v, v ds = 0v 0. 1 forward transconductance g fs i d = 2.5a, v ds = 1 0v 2.4 4.0 s static drain-source on-state resistance r ds(on) i d = 2.5a, v gs = 1 0v 2. 1 2.8 gate threshold voltage v th i d = 1 ma, v ds = 1 0v 2.5 3.0 3.5 v source-drain diode forward voltage v sd i s = 2.5a, v gs = 0v 1 .5 thermal resistance jc junction to case 3. 1 2 / total gate charge q g v dd = 400v, v gs = 1 0v, i d = 5a 45 nc input capacitance c iss 11 40 reverse transfer capacitance c rss v ds = 25v, v gs = 0v, f = 1 mh z 23 pf output capacitance c oss 1 05 turn-on time t on i d = 2.5a, r l = 60 , v gs = 1 0v 55 1 00 ns turn-off time t off 2 1 0 350
0 2 4 6 8 10 0 5 10 15 20 2sK2671 transfer characteristics v ds = 25v typ tc = - 55 c 25 c 100 c 150 c gate-source voltage v gs [v] drain current i d [a]
static drain-source on-state resistance 0.1 1 10 100 -50 0 50 100 150 2sK2671 v gs = 10v pulse test typ i d = 2.5a case temperature tc [ c] static drain-source on-state resistance r ds(on) [ w ]
gate threshold voltage 0 1 2 3 4 5 6 -50 0 50 100 150 2sK2671 v ds = 10v i d = 1ma typ case temperature tc [ c] gate threshold voltage v th [v]
safe operating area 0.01 0.1 1 10 1 10 100 1000 2sK2671 100 m s tc = 25 c single pulse 200 m s 1ms 10ms dc drain-source voltage v ds [v] drain current i d [a] r ds(on) limit
transient thermal impedance 0.01 0.1 1 10 2sK2671 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 time t [s] transient thermal impedance q jc(t) [ c/w]
0 20 40 60 80 100 0 50 100 150 2sK2671 single avalanche energy derating [%] starting channel temperature tch [ c] single avalanche energy derating
capacitance 1 10 100 1000 10000 0 20 40 60 80 100 2sK2671 0.005 f=1mhz ta=25 c typ ciss coss crss drain-source voltage v ds [v] capacitance ciss coss crss [pf]
single avalanche current - inductive load 1 10 2sK2671 0.1 1 10 100 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 v dd = 100v v gs = 15v ? 0v rg = 60 w i as = 5a e as = 100mj e ar = 10mj inductance l [mh] single avalanche current i as [a]
0 20 40 60 80 100 0 50 100 150 2sK2671 power derating power derating [%] case temperature tc [ c]
0 20 40 60 80 100 0 100 200 300 400 500 2sK2671 0 5 10 15 20 200v gate charge characteristics i d = 5a typ 100v v dd = 400v v gs v ds gate charge qg [nc] drain-source voltage v ds [v] gate-source voltage v gs [v]

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